Three-Dimensional Calculation Analysis of ICRF Heating in LHD

Tetsuo Seki, Ryuhei Kumazawa, Takashi Mutoh, Atsushi Fukuyama1), Kenji Saito, Yuuki Torii2), Norio Takeuchi2), Tetsuo Watari, and LHD Experimental Group

National Institute for Fusion Science, Toki, Gifu 509-5292, Japan
1)Kyoto University, Kyoto 606-8501, Japan
2)Nagoya University, Nagoya 464-8603, Japan

Ion cyclotron range of frequencies (ICRF) heating is one of the effective heating methods for the fusion plasma experiments in the magnetic confinement devices. The power deposition is changed by the position control of the ion cyclotron resonance layers. Change of the profile of the plasma parameters is closely related with plasma confinement. Behavior of the high-energy ions generated by the ICRF heating is also important for understanding of plasma confinement and related instabilities. Therefore, investigation of the ICRF heating is essential to proceed with confinement research of the ICRF heated-plasmas.
Three-dimensional full wave code (TASK/WM) is used for the analysis of the ICRF heating in the helical device. To solve the wave equation, finite Larmor radius expansion is used. Then, the wave is not described completely, but cyclotron damping and Landau damping are included. Fast wave is mainly treated and inclusion of mode-converted ion Bernstein wave is incomplete. The plasma configuration is given by VMEC (Variational Moments Equilibrium Code) and non-symmetric magnetic flux coordinate is used.
The calculation was done in assuming the helium plasma including the hydrogen minority ion and the LHD parameters. The feature of the ion heating is closely related with the ion cyclotron resonance layers. Then, the power deposition profile of the hydrogen ion is calculated when the position of the ion cyclotron resonance layer is changed. The deposition profile in the plasma minor radius direction is compared at the different toroidal angles. The difference of the toroidal power deposition may influence to the difference of the total deposited power when the position of the resonance layer is changed.