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Author(s):
H. Nakamura, K. Ikeda and S. Yamaguchi
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Title:
Physical Model of Nernst Element
Date of publication:
Aug. 1998
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Key words:
indium antimonide, two band model, Nernst effect, power generation, strong magnetic field, transport coefficient, Boltzmann equation, temperature gradient
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Abstract:
Generation of electric power by the Nernst effect is a new application of a semiconductor. A key point of this proposal is to find materials with a high thermomagnetic figure-of-merit, which are called Nernst elements. In order to find candidates of the Nernst element, a physical model to describe its transport phenomena is needed. As the first model, we began with a parabolic two-band model in classical statistics. According to this model, we selected InSb as candidates of the Nernst element and measured their transport coefficients in magnetic fields up to 4 Tesla within a temperature region from 270K to 330K. In this region, we calculated transport coefficients numerically by our physical model. For InSb, experimental data are coincident with theoretical values in strong magnetic field.
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