EBIT (Electron Beam Ion Trap) potential for atomic data production

N. Nakamura

Institute for Laser Science, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

An electron beam ion trap (EBIT)[1] is a versatile tool for producing atomic data for various processes of numerous kinds of ions. It can produce highly charged ions (HCIs) of any element with any charge state. The ions produced can be stored in the EBIT at rest and used for spectroscopic studies which are free from Doppler shift. The trapped ions are also interacting with the monochromatic and unidirectional high energy electron beam so that the relativistic interactions between electrons and HCIs can be studied. In addition, the HCIs produced in the EBIT can be extracted as a beam and used for collision experiments where various materials including atoms, molecules, clusters, and surfaces, can be used as targets.

Consequently, an EBIT is very useful to accumulate the atomic data of HCIs such as those listed below.

- Spectroscopic data including wavelengths, transition probabilities, polarization, not only for electric dipole transitions but also for forbidden transitions.
- Energy levels for relativistic systems.
- Cross sections for electron-HCI collision processes, such as electron impact ionization, dielectronic recombination, and so on.
- Charge transfer cross sections for the collisions of HCIs with atoms, molecules, and clusters.
- Radiation physics data such as secondary particle emission yield for HCI-surface collisions.

In this talk, activities with the Tokyo EBIT[2] and several other EBITs in the world will be presented after brief introduction of the device.

References

[1]R. E. Marrs, M. A. Levine, D. A. Knapp and J. R. Henderson, Phys. Rev. Lett. 60 (1988) 1715
[2]N. Nakamura, J. Asada, F. J. Currell, T. Fukami, T. Hirayama, K. Motohashi, T. Nagata, E. Nojikawa, S. Ohtani, K. Okazaki, M. Sakurai, H. Shiraishi, S. Tsurubuchi and H. Watanabe, Phys. Scr. T73 (1997) 362